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Unleashing GaN
This graph compares the losses of Silicon Carbide, Gallium Nitride (GaN) and Gallium Nitride unleashed with QPT technology.
Silicon-based power transistors will be replaced and the choices are SiC or GaN. As explained elsewhere on the website, driving GaN at speeds greater than 100KHz creates unacceptable ElectroMagnetic Interference (EMI) so it has to be throttled back which makes its performance similar to that of SiC so there are no benefits. There are also significantly increasing heat losses as the switching frequency increases.
QPT has solved these EMI issues with a series of patented innovations that enable GaN to be unleashed to operate at much higher frequencies to deliver all the benefits of increased power savings, minimal heat losses, and significantly higher power density for much smaller power converters which is very important for mobile and many other applications. These innovations come from decades of experience in Radar, RF, plasma engineering and many diverse areas of advanced electronics systems design and development. The result is QPT-controlled GaNs providing improvements in the efficiencies of power conversion of up to 80% while being delivered in integrated driver power transistor modules, that offer a familiar construction approach to power engineers but, when deployed with our WhisperGaN construction technique, offer very easy EMC qualification (easier than discrete SiC or Silicon based systems).
This graph shows how the inefficiencies of other technologies means that the energy losses result in major problems with heat. Whereas QPT-controlled GaN is up to 80% more efficient so much less energy is wasted with hardly any heat.
Global adoption of our innovative, clean technologies is a practical way to make huge saving in carbon emissions to reduce climate change.
* International Energy Agency - Energy-Efficiency Policy Opportunities for Electric Motor-Driven Systems